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SI7374DP-T1-GE3

SI7374DP-T1-GE3

SI7374DP-T1-GE3

Vishay Siliconix

MOSFET 30V 24A 56W 5.5mohm @ 10V

SOT-23

SI7374DP-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Supplier Device Package PowerPAK® SO-8
Weight 506.605978mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 5W Ta 56W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.5mOhm @ 23.8A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 15V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 122nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 23.8A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 5.5nF
Drain to Source Resistance 5.5mOhm
Rds On Max 5.5 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $1.78182 $5.34546

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