FQP19N10L

new-10%

Manufacturer part number:FQP19N10L

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 100V 19A TO-220

Case Package:SOT-23

Datasheet:FQP19N10L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2000
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Current Rating	19A
Power Dissipation-Max	75W Tc
Element Configuration	Single
Power Dissipation	75W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	100mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	870pF @ 25V
Current - Continuous Drain (Id) @ 25°C	19A Tc
Gate Charge (Qg) (Max) @ Vgs	18nC @ 5V
Rise Time	410ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	140 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	19A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Input Capacitance	870pF
Drain to Source Resistance	100mOhm
Rds On Max	100 mΩ
RoHS Status	RoHS Compliant
Lead Free	Lead Free