Welcome to Hotenda.com Online Store!

logo
userjoin
Home

STD8N60DM2

STD8N60DM2

STD8N60DM2

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 600m Ω @ 4A, 10V ±30V 375pF @ 100V 13.5nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

STD8N60DM2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 17 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series MDmesh™ DM2
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Base Part Number STD8N
Power Dissipation-Max 85W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 375pF @ 100V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 13.5nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.70930 $1.4186
5,000 $0.67773 $3.38865
12,500 $0.65518 $7.86216
STD8N60DM2 Product Details

STD8N60DM2 Description

This high-voltage N-channel Power MOSFET is part of the MDmesh? DM2 fast recovery diode series. It offers a very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.



STD8N60DM2 Features

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected



STD8N60DM2 Applications

Switching applications




Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News