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FQPF5N80

  • FQPF5N80
  • FQPF5N80

FQPF5N80

FQPF5N80

ON Semiconductor

FQPF5N80 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQPF5N80 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 47W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.6Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.8A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.77000 $0.77
500 $0.7623 $381.15
1000 $0.7546 $754.6
1500 $0.7469 $1120.35
2000 $0.7392 $1478.4
2500 $0.7315 $1828.75
FQPF5N80 Product Details

FQPF5N80      Description


  These N-channel enhanced power field effect transistors are produced by Fairchild's planar stripe and DMOS technology.This advanced technology is specifically tailored to minimize on-resistance, provides excellent switching performance, and can withstand high energy pulses in AVA anchoring and rectifying mode, these devices are ideal for efficient switching mode power supplies.

 

FQPF5N80     Features


·2.8A,800VRDS(on)=2.6Ω @VGs=10 V Low gate charge(typical 25nC)

·Low Crss(typical 11 pF)

·Fast switching

100% avalanche tested

Improved dvidt capability

 

FQPF5N80     Applications


switching mode power supplies

 



 




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