FQPF5N80 Description
These N-channel enhanced power field effect transistors are produced by Fairchild's planar stripe and DMOS technology.This advanced technology is specifically tailored to minimize on-resistance, provides excellent switching performance, and can withstand high energy pulses in AVA anchoring and rectifying mode, these devices are ideal for efficient switching mode power supplies.
FQPF5N80 Features
·2.8A,800VRDS(on)=2.6Ω @VGs=10 V Low gate charge(typical 25nC)
·Low Crss(typical 11 pF)
·Fast switching
100% avalanche tested
Improved dvidt capability
FQPF5N80 Applications
switching mode power supplies
