HGTG10N120BND Description

  The HGIG1ON120BND is a  PunchThroughP IGBT design. This is a new member of the LGBT family of MOS gated high voltage switches. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of MOSFET and the low conduction loss of bipolar transistors. GBT is a development TA49290. The diode used is a development TA49189.

IGBT is an ideal choice for many high voltage switches.

In applications that require medium frequency operation with low conduction loss, such as AC and DC motor controls, power and solenoid relays and contactor drivers.

HGTG10N120BND Features

·35A1200V，Tc=25C

·1200V Switching SOA Capability

·Typical Fall Time.............140ns atT=150°·Short Circuit Rating

·Low Conduction Loss

HGTG10N120BND  Applications

high voltage switches