HGTG18N120BND Description

The HGTG18N120BND is an IGBT with a Non-Punch Through (NPT) design. The MOS gate high voltage switching IGBT family has a new member. IGBTs are a hybrid of MOSFETs and bipolar transistors that combine the best of both worlds. This device possesses a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Many high-voltage switching applications with moderate frequencies and low conduction losses, such as AC and DC motor controllers, power supplies, and drivers for solenoids, relays, and contactors, benefit from the IGBT. HGTG18N120BND applications include UPS and other industries. 

HGTG18N120BND Features

• Short Circuit Rating

• Low Conduction Loss

• This Device is Pb?Free

• 26 A, 1200 V, TC = 110°C

• Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A

• Typical Fall Time . . . . . . . . . . . . . 140 ns at TJ = 150°C

HGTG18N120BND Applications

• UPS

• Other industries