AIKW75N60CTE8188XKSA1 Description

The AIKW75N60CTE8188XKSA1 is a Low Loss DuoPack: IGBT in TRENCHSTOP? and Fieldstop technology with a soft, fast recovery antiparallel Emitter Controlled diode. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate, and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.

AIKW75N60CTE8188XKSA1 Features

• Positive temperature coefficient in VCE(sat)

• Low EMI

• Low gate charge QG

• Green package

• Verysoft, fast recovery antiparallel Emitter Controlled HE diode

• TRENCHSTOP? and Fieldstop technology for 600V applications offers:

- very tight paramete rdistribution

- high ruggedness, temperatures tablebehavior

- very high switching speed

• Automotive AEC-Q101 qualified

• Designed for DC/AC converters for Automotive Application

• Very lowVCE(sat) 1.5V (typ.)

• Maximum junction temperature 175°C

• Dynamically stress tested

• Short circuit withstand time 5μs

• 100% short circuit tested

• 100% of the parts are dynamically tested

AIKW75N60CTE8188XKSA1 Applications

• Main inverter

• Climate compressor

• PTC heater

• Motor drives