NGB8206NTF4 Description
NGB8206NTF4 is a 350v N?Channel D2 PAK Ignition IGBT. This Logic Level Insulated Gate Bipolar Transistor (IGBT) NGB8206NTF4 features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor NGB8206NTF4 is in the TO-263-3 package with 150W power dissipation.
NGB8206NTF4 Features
Ideal for Coil-on-Plug and Driver-on-Coil Applications
Gate-Emitter ESD Protection
Temperature Compensated Gate -Collector Voltage Clamp Limits Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE)
Pb-Free Packages are Available
NGB8206NTF4 Applications
Ignition Systems
Automotive
Hybrid, electric & powertrain systems
Enterprise systems
Enterprise projectors
Personal electronics
Home theater & entertainment
