NGB8206NTF4 Description

NGB8206NTF4 is a 350v N?Channel D2 PAK Ignition IGBT. This Logic Level Insulated Gate Bipolar Transistor (IGBT) NGB8206NTF4 features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor NGB8206NTF4 is in the TO-263-3 package with 150W power dissipation.

NGB8206NTF4 Features

Ideal for Coil-on-Plug and Driver-on-Coil Applications

Gate-Emitter ESD Protection

Temperature Compensated Gate -Collector Voltage Clamp Limits Stress Applied to Load

Integrated ESD Diode Protection

Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices

Low Saturation Voltage

High Pulsed Current Capability

Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE)

Pb-Free Packages are Available

NGB8206NTF4 Applications

Ignition Systems

Automotive 

Hybrid, electric & powertrain systems 

Enterprise systems 

Enterprise projectors 

Personal electronics 

Home theater & entertainment