STGWA15S120DF3 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGWA15S120DF3 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
32 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
259W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGWA15
Input Type
Standard
Power - Max
259W
Collector Emitter Voltage (VCEO)
2.05V
Max Collector Current
30A
Reverse Recovery Time
270 ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Test Condition
600V, 15A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.05V @ 15V, 15A
IGBT Type
Trench Field Stop
Gate Charge
53nC
Current - Collector Pulsed (Icm)
60A
Td (on/off) @ 25°C
23ns/140ns
Switching Energy
540μJ (on), 1.38mJ (off)
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.80000
$7.8
30
$6.79333
$203.7999
120
$5.97108
$716.5296
510
$5.27075
$2688.0825
STGWA15S120DF3 Product Details
STGWA15S120DF3 Description
The STGWA15S120DF3 IGBT was created by employing a cutting-edge, exclusive trench gate field-stop structure. The S series of 1200 V IGBTs, which includes the STGWA15S120DF3, is designed to maximize efficiency in low-frequency industrial applications. Additionally, a safer paralleling operation is produced by a positive VCE(sat) temperature coefficient and constrained parameter distribution.