HGTG20N60B3D

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Manufacturer part number:HGTG20N60B3D

Manufacturer:ON Semiconductor

Description:HGTG20N60B3D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:HGTG20N60B3D Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Voltage - Rated DC	600V
Max Power Dissipation	165W
Current Rating	20A
Base Part Number	HGTG20N60
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	165W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	25 ns
Transistor Application	MOTOR CONTROL
Rise Time	20ns
Turn-Off Delay Time	220 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
Reverse Recovery Time	55ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.8V
Max Breakdown Voltage	600V
Turn On Time	45 ns
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 20A
Turn Off Time-Nom (toff)	360 ns
Gate Charge	80nC
Current - Collector Pulsed (Icm)	160A
Switching Energy	475μJ (on), 1.05mJ (off)
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free