IXGP36N60A3

new-10%

Manufacturer part number:IXGP36N60A3

Manufacturer:IXYS

Description:IGBT

Case Package:SOT-23

Datasheet:IXGP36N60A3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Series	GenX3™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	220W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	23ns
JEDEC-95 Code	TO-220AB
Voltage - Collector Emitter Breakdown (Max)	600V
Power Dissipation-Max (Abs)	220W
Turn On Time	43 ns
Test Condition	400V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.4V @ 15V, 30A
Turn Off Time-Nom (toff)	1000 ns
IGBT Type	PT
Gate Charge	80nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	18ns/330ns
Switching Energy	740μJ (on), 3mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	Non-RoHS Compliant