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HUF75333S3ST

HUF75333S3ST

HUF75333S3ST

ON Semiconductor

MOSFET N-CH 55V 60A D2PAK

SOT-23

HUF75333S3ST Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK (TO-263AB)
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series UltraFET™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 60A
Power Dissipation-Max 150W Tc
Element Configuration Single
Power Dissipation 150W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16mOhm @ 66A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 66A Tc
Gate Charge (Qg) (Max) @ Vgs 85nC @ 20V
Rise Time 55ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 66A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Input Capacitance 1.3nF
Drain to Source Resistance 16mOhm
Rds On Max 16 mΩ
RoHS Status RoHS Compliant
Lead Free Lead Free

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