HUF76419S3ST

new-10%

Manufacturer part number:HUF76419S3ST

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 29A D2PAK

Case Package:SOT-23

Datasheet:HUF76419S3ST Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	UltraFET™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	27A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Voltage	60V
Power Dissipation-Max	75W Tc
Element Configuration	Single
Current	29A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	75W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35m Ω @ 29A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	29A Tc
Gate Charge (Qg) (Max) @ Vgs	28nC @ 10V
Rise Time	150ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	74 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	29A
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	60V
RoHS Status	RoHS Compliant
Lead Free	Lead Free