KSD1273QYDTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSD1273QYDTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
2W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
500 @ 500mA 4V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 2A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
3A
Transition Frequency
30MHz
Frequency - Transition
30MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.28000
$0.28
500
$0.2772
$138.6
1000
$0.2744
$274.4
1500
$0.2716
$407.4
2000
$0.2688
$537.6
2500
$0.266
$665
KSD1273QYDTU Product Details
KSD1273QYDTU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 500 @ 500mA 4V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 2A.30MHz is present in the transition frequency.The device has a 60V maximal voltage - Collector Emitter Breakdown.
KSD1273QYDTU Features
the DC current gain for this device is 500 @ 500mA 4V the vce saturation(Max) is 1V @ 50mA, 2A a transition frequency of 30MHz
KSD1273QYDTU Applications
There are a lot of Rochester Electronics, LLC KSD1273QYDTU applications of single BJT transistors.