KSA1013OTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 200mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of -1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 50mA, 500mA.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 50MHz.As a result, it can handle voltages as low as 160V volts.Maximum collector currents can be below 1A volts.
KSA1013OTA Features
the DC current gain for this device is 100 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz
KSA1013OTA Applications
There are a lot of ON Semiconductor KSA1013OTA applications of single BJT transistors.
- Muting
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- Interface
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- Driver
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- Inverter
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