NJVNJD35N04G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NJVNJD35N04G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
45W
Base Part Number
NJD35N04
Pin Count
3
Polarity
NPN
Element Configuration
Single
Power - Max
45W
Halogen Free
Halogen Free
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
1.5V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 2A 2V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 20mA, 2A
Collector Emitter Breakdown Voltage
350V
Transition Frequency
90MHz
Frequency - Transition
90MHz
Collector Base Voltage (VCBO)
700V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.63000
$0.63
500
$0.6237
$311.85
1000
$0.6174
$617.4
1500
$0.6111
$916.65
2000
$0.6048
$1209.6
2500
$0.5985
$1496.25
NJVNJD35N04G Product Details
NJVNJD35N04G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 2000 @ 2A 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).90MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
NJVNJD35N04G Features
the DC current gain for this device is 2000 @ 2A 2V the vce saturation(Max) is 1.5V @ 20mA, 2A a transition frequency of 90MHz
NJVNJD35N04G Applications
There are a lot of ON Semiconductor NJVNJD35N04G applications of single BJT transistors.