BC548BZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BC548BZL1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
625mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
300MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.03000
$0.03
500
$0.0297
$14.85
1000
$0.0294
$29.4
1500
$0.0291
$43.65
2000
$0.0288
$57.6
2500
$0.0285
$71.25
BC548BZL1G Product Details
BC548BZL1G Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor comes in a supplier device package of TO-92-3.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BC548BZL1G Features
the DC current gain for this device is 200 @ 2mA 5V the vce saturation(Max) is 600mV @ 5mA, 100mA the supplier device package of TO-92-3
BC548BZL1G Applications
There are a lot of Rochester Electronics, LLC BC548BZL1G applications of single BJT transistors.