SBCP56T3G Overview
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.In this part, there is a transition frequency of 130MHz.Maximum collector currents can be below 1A volts.
SBCP56T3G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
SBCP56T3G Applications
There are a lot of ON Semiconductor SBCP56T3G applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
