KSA642GBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 50mA 1V.A collector emitter saturation voltage of -350mV allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 30mA, 300mA.Keeping the emitter base voltage at -5V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -300mA for this device.Supplier package TO-92-3 contains the product.Detection of Collector Emitter Breakdown at 25V maximal voltage is present.In extreme cases, the collector current can be as low as 300mA volts.
KSA642GBU Features
the DC current gain for this device is 200 @ 50mA 1V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
the current rating of this device is -300mA
the supplier device package of TO-92-3
KSA642GBU Applications
There are a lot of ON Semiconductor KSA642GBU applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
