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KSD569RTU

KSD569RTU

KSD569RTU

ON Semiconductor

KSD569RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD569RTU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.5W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 3A 1V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 7A
KSD569RTU Product Details

KSD569RTU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 3A 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 500mA, 5A.Product comes in the supplier's device package TO-220-3.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

KSD569RTU Features


the DC current gain for this device is 40 @ 3A 1V
the vce saturation(Max) is 500mV @ 500mA, 5A
the supplier device package of TO-220-3

KSD569RTU Applications


There are a lot of ON Semiconductor KSD569RTU applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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