BCW60B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BCW60B Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
40
JESD-30 Code
R-PDSO-G3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
350mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 2mA 5V
Current - Collector Cutoff (Max)
20nA
Vce Saturation (Max) @ Ib, Ic
550mV @ 1.25mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
32V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
250MHz
Frequency - Transition
125MHz
RoHS Status
Non-RoHS Compliant
BCW60B Product Details
BCW60B Overview
DC current gain in this device equals 180 @ 2mA 5V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 550mV @ 1.25mA, 50mA.In the part, the transition frequency is 250MHz.Detection of Collector Emitter Breakdown at 32V maximal voltage is present.
BCW60B Features
the DC current gain for this device is 180 @ 2mA 5V the vce saturation(Max) is 550mV @ 1.25mA, 50mA a transition frequency of 250MHz
BCW60B Applications
There are a lot of Rochester Electronics, LLC BCW60B applications of single BJT transistors.