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KSC1507Y

KSC1507Y

KSC1507Y

ON Semiconductor

KSC1507Y datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC1507Y Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC1507
Power - Max 15W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA 10V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 200μA
Frequency - Transition 80MHz
KSC1507Y Product Details

KSC1507Y Overview


This device has a DC current gain of 120 @ 10mA 10V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 5mA, 50mA.Supplier package TO-220-3 contains the product.Single BJT transistor shows a 300V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

KSC1507Y Features


the DC current gain for this device is 120 @ 10mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the supplier device package of TO-220-3

KSC1507Y Applications


There are a lot of ON Semiconductor KSC1507Y applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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