KSA709GBU

join

new-10%

Manufacturer part number:KSA709GBU

Manufacturer:ON Semiconductor

Description:KSA709GBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:KSA709GBU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3
Operating Temperature	150°C TJ
Packaging	Bulk
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Base Part Number	KSA709
Power - Max	800mW
Transistor Type	PNP
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 50mA 2V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	400mV @ 20mA, 200mA
Voltage - Collector Emitter Breakdown (Max)	150V
Current - Collector (Ic) (Max)	700mA
Frequency - Transition	50MHz

Quantity	Unit Price	Ext. Price
1	$0.042315	$0.042315
500	$0.031114	$15.557
1000	$0.025928	$25.928
2000	$0.023787	$47.574
5000	$0.022231	$111.155
10000	$0.020680	$206.8
15000	$0.020000	$300
50000	$0.019666	$983.3

KSA709GBU Overview

In this device, the DC current gain is 200 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 20mA, 200mA.This product comes in a TO-92-3 device package from the supplier.A 150V maximal voltage - Collector Emitter Breakdown is present in the device.