KSA709GBU Overview
In this device, the DC current gain is 200 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 20mA, 200mA.This product comes in a TO-92-3 device package from the supplier.A 150V maximal voltage - Collector Emitter Breakdown is present in the device.
KSA709GBU Features
the DC current gain for this device is 200 @ 50mA 2V
the vce saturation(Max) is 400mV @ 20mA, 200mA
the supplier device package of TO-92-3
KSA709GBU Applications
There are a lot of ON Semiconductor KSA709GBU applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
