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CMUT5088E TR PBFREE

CMUT5088E TR PBFREE

CMUT5088E TR PBFREE

Central Semiconductor Corp

CMUT5088E TR PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

CMUT5088E TR PBFREE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Operating Temperature-65°C~150°C TJ
PackagingCut Tape (CT)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 350mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 430 @ 100μA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 110mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 100MHz
RoHS StatusROHS3 Compliant
In-Stock:11617 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.62000$0.62
500$0.6138$306.9
1000$0.6076$607.6
1500$0.6014$902.1
2000$0.5952$1190.4
2500$0.589$1472.5

CMUT5088E TR PBFREE Product Details

CMUT5088E TR PBFREE Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 430 @ 100μA 5V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 110mV @ 10mA, 100mA.The device has a 50V maximal voltage - Collector Emitter Breakdown.

CMUT5088E TR PBFREE Features


the DC current gain for this device is 430 @ 100μA 5V
the vce saturation(Max) is 110mV @ 10mA, 100mA

CMUT5088E TR PBFREE Applications


There are a lot of Central Semiconductor Corp CMUT5088E TR PBFREE applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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