CMUT5088E TR PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CMUT5088E TR PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Surface Mount
Package / Case
SC-89, SOT-490
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
350mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
430 @ 100μA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
110mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.62000
$0.62
500
$0.6138
$306.9
1000
$0.6076
$607.6
1500
$0.6014
$902.1
2000
$0.5952
$1190.4
2500
$0.589
$1472.5
CMUT5088E TR PBFREE Product Details
CMUT5088E TR PBFREE Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 430 @ 100μA 5V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 110mV @ 10mA, 100mA.The device has a 50V maximal voltage - Collector Emitter Breakdown.
CMUT5088E TR PBFREE Features
the DC current gain for this device is 430 @ 100μA 5V the vce saturation(Max) is 110mV @ 10mA, 100mA
CMUT5088E TR PBFREE Applications
There are a lot of Central Semiconductor Corp CMUT5088E TR PBFREE applications of single BJT transistors.