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PZT2907AT1G

PZT2907AT1G

PZT2907AT1G

ON Semiconductor

PZT2907AT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

PZT2907AT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface MountYES
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation1.5W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-600mA
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number PZT2907A
Pin Count4
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.5W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage60V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage-1.6V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Height 1.651mm
Length 6.6802mm
Width 3.7084mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:13469 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.46000$0.46
500$0.4554$227.7
1000$0.4508$450.8
1500$0.4462$669.3
2000$0.4416$883.2
2500$0.437$1092.5

PZT2907AT1G Product Details

PZT2907AT1G Overview


In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -1.6V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -600mA.As you can see, the part has a transition frequency of 200MHz.Input voltage breakdown is available at 60V volts.Collector current can be as low as 600mA volts at its maximum.

PZT2907AT1G Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 200MHz

PZT2907AT1G Applications


There are a lot of ON Semiconductor PZT2907AT1G applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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