BCP52-16,115 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.In this part, there is a transition frequency of 115MHz.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.Single BJT transistor is possible to have a collector current as low as -1A volts at Single BJT transistors maximum.

BCP52-16,115 Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 115MHz

BCP52-16,115 Applications

There are a lot of Nexperia USA Inc. BCP52-16,115 applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting