KSB1015YTU Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 5V.A collector emitter saturation voltage of -500mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 300mA, 3A.Emitter base voltages of -7V can achieve high levels of efficiency.The current rating of this fuse is -3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In this part, there is a transition frequency of 9MHz.A maximum collector current of 3A volts is possible.

KSB1015YTU Features

the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 1V @ 300mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -3A
a transition frequency of 9MHz

KSB1015YTU Applications

There are a lot of ON Semiconductor KSB1015YTU applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting