KSB596YTU Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 5V.A collector emitter saturation voltage of -1V allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.7V @ 300mA, 3A.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -4A current rating.As a result, the part has a transition frequency of 3MHz.A maximum collector current of 4A volts can be achieved.

KSB596YTU Features

the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1.7V @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz

KSB596YTU Applications

There are a lot of ON Semiconductor KSB596YTU applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver