KSA1625KBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSA1625KBU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
750mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
10MHz
Frequency - Transition
10MHz
Turn Off Time-Max (toff)
6000ns
Turn On Time-Max (ton)
1000ns
RoHS Status
ROHS3 Compliant
KSA1625KBU Product Details
KSA1625KBU Overview
In this device, the DC current gain is 100 @ 50mA 5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 10mA, 100mA.10MHz is present in the transition frequency.A 400V maximal voltage - Collector Emitter Breakdown is present in the device.
KSA1625KBU Features
the DC current gain for this device is 100 @ 50mA 5V the vce saturation(Max) is 1V @ 10mA, 100mA a transition frequency of 10MHz
KSA1625KBU Applications
There are a lot of Rochester Electronics, LLC KSA1625KBU applications of single BJT transistors.