MPS6513 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MPS6513 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
BOTTOM
Reach Compliance Code
unknown
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
90 @ 2mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
200mA
RoHS Status
ROHS3 Compliant
MPS6513 Product Details
MPS6513 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 90 @ 2mA 10V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.
MPS6513 Features
the DC current gain for this device is 90 @ 2mA 10V the vce saturation(Max) is 500mV @ 5mA, 50mA
MPS6513 Applications
There are a lot of Rochester Electronics, LLC MPS6513 applications of single BJT transistors.