STD826T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
STD826T4 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Other Transistors
Max Power Dissipation
15W
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STD826
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE
Power Dissipation
15W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 2V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1.1V @ 150mA, 3A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
100MHz
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Saturation Current
3A
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.176053
$2.176053
10
$2.052880
$20.5288
100
$1.936679
$193.6679
500
$1.827056
$913.528
1000
$1.723638
$1723.638
STD826T4 Product Details
STD826T4 Overview
This device has a DC current gain of 100 @ 100mA 2V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V allows for a high level of efficiency.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 30V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
STD826T4 Features
the DC current gain for this device is 100 @ 100mA 2V the vce saturation(Max) is 1.1V @ 150mA, 3A the emitter base voltage is kept at 5V a transition frequency of 100MHz
STD826T4 Applications
There are a lot of STMicroelectronics STD826T4 applications of single BJT transistors.