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STD826T4

STD826T4

STD826T4

STMicroelectronics

STD826T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

STD826T4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingCut Tape (CT)
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Max Power Dissipation15W
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STD826
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE
Power Dissipation15W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 2V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1.1V @ 150mA, 3A
Collector Emitter Breakdown Voltage30V
Transition Frequency 100MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Saturation Current 3A
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:3925 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.176053$2.176053
10$2.052880$20.5288
100$1.936679$193.6679
500$1.827056$913.528
1000$1.723638$1723.638

STD826T4 Product Details

STD826T4 Overview


This device has a DC current gain of 100 @ 100mA 2V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V allows for a high level of efficiency.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 30V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

STD826T4 Features


the DC current gain for this device is 100 @ 100mA 2V
the vce saturation(Max) is 1.1V @ 150mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

STD826T4 Applications


There are a lot of STMicroelectronics STD826T4 applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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