MJD44H11T5G Overview

In this device, the DC current gain is 40 @ 4A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As a result, the part has a transition frequency of 85MHz.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.

MJD44H11T5G Features

the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 85MHz

MJD44H11T5G Applications

There are a lot of ON Semiconductor MJD44H11T5G applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver