KSC1623GMTF Overview

In this device, the DC current gain is 200 @ 1mA 6V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 150mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.As a result, it can handle voltages as low as 50V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

KSC1623GMTF Features

the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 250MHz

KSC1623GMTF Applications

There are a lot of ON Semiconductor KSC1623GMTF applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting