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MPSW01ARLRA

MPSW01ARLRA

MPSW01ARLRA

ON Semiconductor

MPSW01ARLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPSW01ARLRA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.75
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 1W
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 1A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MPSW01A
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 10mW
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 55
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $12.413760 $12.41376
10 $11.711094 $117.11094
100 $11.048202 $1104.8202
500 $10.422832 $5211.416
1000 $9.832861 $9832.861
MPSW01ARLRA Product Details

MPSW01ARLRA Overview


This device has a DC current gain of 60 @ 100mA 1V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.The part has a transition frequency of 50MHz.Collector current can be as low as 1A volts at its maximum.

MPSW01ARLRA Features


the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 50MHz

MPSW01ARLRA Applications


There are a lot of ON Semiconductor MPSW01ARLRA applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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