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US6T7TR

US6T7TR

US6T7TR

ROHM Semiconductor

US6T7TR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

US6T7TR Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish TIN COPPER
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation 1W
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Current Rating -1.5A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number US6T
Pin Count 6
Number of Elements 1
Element Configuration Single
Power - Max 1W
Transistor Application AMPLIFIER
Gain Bandwidth Product 280MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 370mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 280MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
hFE Min 270
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.083574 $1.083574
10 $1.022240 $10.2224
100 $0.964377 $96.4377
500 $0.909790 $454.895
1000 $0.858292 $858.292
US6T7TR Product Details

US6T7TR Overview


DC current gain in this device equals 270 @ 100mA 2V, which is the ratio of the base current to the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.The current rating of this fuse is -1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 280MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.In extreme cases, the collector current can be as low as 1.5A volts.

US6T7TR Features


the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 370mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is -1.5A
a transition frequency of 280MHz

US6T7TR Applications


There are a lot of ROHM Semiconductor US6T7TR applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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