MPS8099G Overview
This device has a DC current gain of 100 @ 1mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 400mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As you can see, the part has a transition frequency of 150MHz.Collector current can be as low as 500mA volts at its maximum.
MPS8099G Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 150MHz
MPS8099G Applications
There are a lot of ON Semiconductor MPS8099G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
