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KSC2383YTA

KSC2383YTA

KSC2383YTA

ON Semiconductor

KSC2383YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC2383YTA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Number of Pins 3
Weight 371.1027mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Box (TB)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 160V
Max Power Dissipation900mW
Terminal Position BOTTOM
Current Rating1A
Frequency 100MHz
Base Part Number KSC2383
Number of Elements 1
Element ConfigurationSingle
Power Dissipation900mW
Transistor Application AMPLIFIER
Gain Bandwidth Product100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 200mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA
Collector Emitter Breakdown Voltage160V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage1.5V
Max Breakdown Voltage 160V
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 6V
hFE Min 60
Height 8mm
Length 4.9mm
Width 3.9mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:13010 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.478680$0.47868
10$0.451585$4.51585
100$0.426023$42.6023
500$0.401909$200.9545
1000$0.379159$379.159

KSC2383YTA Product Details

KSC2383YTA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 200mA 5V DC current gain.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.A VCE saturation (Max) of 1.5V @ 50mA, 500mA means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 100MHz.A breakdown input voltage of 160V volts can be used.A maximum collector current of 1A volts can be achieved.

KSC2383YTA Features


the DC current gain for this device is 160 @ 200mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 100MHz

KSC2383YTA Applications


There are a lot of ON Semiconductor KSC2383YTA applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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