NJVMJD32CG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NJVMJD32CG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1.56W
Base Part Number
MJD32
Pin Count
3
Configuration
Single
Power - Max
1.56W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
1.2V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A 4V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
3MHz
Frequency - Transition
3MHz
Collector Base Voltage (VCBO)
100V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.65000
$0.65
75
$0.53707
$40.28025
150
$0.43833
$65.7495
525
$0.34650
$181.9125
1,050
$0.27720
$0.2772
NJVMJD32CG Product Details
NJVMJD32CG Overview
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.2V @ 375mA, 3A.As a result, the part has a transition frequency of 3MHz.A maximum collector current of 3A volts can be achieved.
NJVMJD32CG Features
the DC current gain for this device is 10 @ 3A 4V the vce saturation(Max) is 1.2V @ 375mA, 3A a transition frequency of 3MHz
NJVMJD32CG Applications
There are a lot of ON Semiconductor NJVMJD32CG applications of single BJT transistors.