KSC5027OTU Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 200mA 5V.A collector emitter saturation voltage of 2V allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 300mA, 1.5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.15MHz is present in the transition frequency.In extreme cases, the collector current can be as low as 3A volts.

KSC5027OTU Features

the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 15MHz

KSC5027OTU Applications

There are a lot of ON Semiconductor KSC5027OTU applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting