KSC5305DTU Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 8 @ 2A 1V.A collector emitter saturation voltage of 500mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 400mA, 2A.The base voltage of the emitter can be kept at 12V to achieve high efficiency.When collector current reaches its maximum, it can reach 5A volts.

KSC5305DTU Features

the DC current gain for this device is 8 @ 2A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 400mA, 2A
the emitter base voltage is kept at 12V

KSC5305DTU Applications

There are a lot of ON Semiconductor KSC5305DTU applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting