KSC5603DTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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KSC5603DTU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
800V
Max Power Dissipation
100W
Current Rating
3A
Frequency
5MHz
Number of Elements
1
Element Configuration
Single
Power Dissipation
100W
Transistor Application
SWITCHING
Gain Bandwidth Product
5MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
800V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 400mA 3V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 200μA, 1A
Collector Emitter Breakdown Voltage
800V
Transition Frequency
11MHz
Collector Emitter Saturation Voltage
500mV
Collector Base Voltage (VCBO)
1.6kV
Emitter Base Voltage (VEBO)
12V
hFE Min
20
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.690704
$2.690704
10
$2.538400
$25.384
100
$2.394717
$239.4717
500
$2.259167
$1129.5835
1000
$2.131290
$2131.29
KSC5603DTU Product Details
KSC5603DTU Overview
This device has a DC current gain of 20 @ 400mA 3V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 200μA, 1A.With the emitter base voltage set at 12V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.As you can see, the part has a transition frequency of 11MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
KSC5603DTU Features
the DC current gain for this device is 20 @ 400mA 3V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 2.5V @ 200μA, 1A the emitter base voltage is kept at 12V the current rating of this device is 3A a transition frequency of 11MHz
KSC5603DTU Applications
There are a lot of ON Semiconductor KSC5603DTU applications of single BJT transistors.