NST3906F3T5G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In the part, the transition frequency is 250MHz.A breakdown input voltage of 40V volts can be used.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
NST3906F3T5G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
NST3906F3T5G Applications
There are a lot of ON Semiconductor NST3906F3T5G applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
