Welcome to Hotenda.com Online Store!

logo
userjoin
Home

MMBT3906LT1G

  • MMBT3906LT1G
  • MMBT3906LT1G

MMBT3906LT1G

MMBT3906LT1G

ON Semiconductor

MMBT3906LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT3906LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 19 hours ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC -40V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -200mA
Frequency 250MHz
Base Part Number MMBT3906
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 225mW
Gain Bandwidth Product 250MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) -40V
Max Collector Current -200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage -40V
Current - Collector (Ic) (Max) 200mA
Transition Frequency 250MHz
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) -40V
Emitter Base Voltage (VEBO) -5V
hFE Min 30
Max Junction Temperature (Tj) 150°C
VCEsat-Max 0.4 V
Turn On Time-Max (ton) 70ns
Collector-Base Capacitance-Max 4.5pF
Height 1.11mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.02692 $0.08076
6,000 $0.02437 $0.14622
15,000 $0.02130 $0.3195
30,000 $0.01925 $0.5775
75,000 $0.01721 $1.29075
150,000 $0.01444 $2.166
MMBT3906LT1G Product Details
MMBT3906LT1G Description


The MMBT3906LT1G SMD PNP transistor comes with the SOT-23-3 package. This device is designed for general-purpose amplifier and switching applications with collector currents ranging from 10 A to 100 mA. It has a working temperature range of -55°C to 150°C with a power dissipation of 300mW. Because the transistor's maximum collector current is 200mA, it may drive any load that is less than 200mA (0.2A).


MMBT3906LT1G Features


PNP Transistor
AEC?Q101 Qualified
DC current gain hFE: 100~300
Maximum power dissipation: 0.3W
Surface mout for flexible PCB design
Low saturation voltage (Collector to Emitter): 0.4V


MMBT3906LT1G Applications


General Purpose Switching
General Purpose Aplification
Inverters and Converters
Darlington Pair Circuits
LED Lamp Flashers

Related Part Number

NSV1C200LT1G
ON Semiconductor
NSV1C200LT1G
$0 $/piece
SBC846ALT1G
ON Semiconductor
SBC846ALT1G
$0 $/piece
2N5550RLRAG
Rochester Electronics, LLC
2N5550RLRAG
$0 $/piece
MMBT3904L3-TP
Micro Commercial Co
MMBT3904L3-TP
$0 $/piece
ZTX457
Diodes Incorporated
ZTX457
$0 $/piece
2SB1201S-TL-E
ON Semiconductor
2SB1201S-TL-E
$0 $/piece
BC807-25 RFG
Taiwan Semiconductor Corporation
BC807-25 RFG
$0 $/piece
FMMT493ATA
Diodes Incorporated
FMMT493ATA
$0 $/piece
NSS1C200LT1G
ON Semiconductor
NSS1C200LT1G
$0 $/piece
PBHV9050Z,115
Nexperia USA Inc.
PBHV9050Z,115
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News