MMBT3906LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBT3906LT1G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 19 hours ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Voltage - Rated DC
-40V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-200mA
Frequency
250MHz
Base Part Number
MMBT3906
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
225mW
Gain Bandwidth Product
250MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
-40V
Max Collector Current
-200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
-40V
Current - Collector (Ic) (Max)
200mA
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
-40V
Emitter Base Voltage (VEBO)
-5V
hFE Min
30
Max Junction Temperature (Tj)
150°C
VCEsat-Max
0.4 V
Turn On Time-Max (ton)
70ns
Collector-Base Capacitance-Max
4.5pF
Height
1.11mm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:42629 items
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Unit Price
Ext. Price
MMBT3906LT1G Product Details
MMBT3906LT1G Description
The MMBT3906LT1G SMD PNP transistor comes with the SOT-23-3 package. This device is designed for general-purpose amplifier and switching applications with collector currents ranging from 10 A to 100 mA. It has a working temperature range of -55°C to 150°C with a power dissipation of 300mW. Because the transistor's maximum collector current is 200mA, it may drive any load that is less than 200mA (0.2A).
MMBT3906LT1G Features
PNP Transistor AEC?Q101 Qualified DC current gain hFE: 100~300 Maximum power dissipation: 0.3W Surface mout for flexible PCB design Low saturation voltage (Collector to Emitter): 0.4V
MMBT3906LT1G Applications
General Purpose Switching General Purpose Aplification Inverters and Converters Darlington Pair Circuits LED Lamp Flashers
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