MMBT6428LT1G Overview

This device has a DC current gain of 250 @ 100μA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 600mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.A breakdown input voltage of 50V volts can be used.In extreme cases, the collector current can be as low as 200mA volts.

MMBT6428LT1G Features

the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 100MHz

MMBT6428LT1G Applications

There are a lot of ON Semiconductor MMBT6428LT1G applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver