KSD1616AYTA Overview
In this device, the DC current gain is 135 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 50mA, 1A.The emitter base voltage can be kept at 6V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.A maximum collector current of 1A volts can be achieved.
KSD1616AYTA Features
the DC current gain for this device is 135 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 160MHz
KSD1616AYTA Applications
There are a lot of ON Semiconductor KSD1616AYTA applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
