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MJE13006

MJE13006

MJE13006

NTE Electronics, Inc

NPN -65°C ~ 150°C (TJ) 1mA TO-220-3 Through Hole

SOT-23

MJE13006 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case TO-220-3
Mounting Type Through Hole
Supplier Device Package TO-220
Mfr NTE Electronics, Inc
Package Bag
Product Status Active
Series SWITCHMODE?
Operating Temperature -65°C ~ 150°C (TJ)
Power - Max 80 W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 2A, 5V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max) 300 V
Current - Collector (Ic) (Max) 8 A
Frequency - Transition 4MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.600000 $1.6
10 $1.509434 $15.09434
100 $1.423994 $142.3994
500 $1.343391 $671.6955
1000 $1.267350 $1267.35
MJE13006 Product Details

MJE13006 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 8 @ 2A, 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 300 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

MJE13006 Features


the DC current gain for this device is 8 @ 2A, 5V
the vce saturation(Max) is 3V @ 2A, 8A
the supplier device package of TO-220


MJE13006 Applications


There are a lot of NTE Electronics, Inc
MJE13006 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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