2SAR523MT2L Overview
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -150mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 50mA.The base voltage of the emitter can be kept at -5V to achieve high efficiency.In this part, there is a transition frequency of 300MHz.Single BJT transistor can be broken down at a voltage of 50V volts.A maximum collector current of 100mA volts is possible.
2SAR523MT2L Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
2SAR523MT2L Applications
There are a lot of ROHM Semiconductor 2SAR523MT2L applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
