NSS40200LT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 220 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -135mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 170mV @ 200mA, 2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 100MHz.Breakdown input voltage is 40V volts.A maximum collector current of 2A volts is possible.
NSS40200LT1G Features
the DC current gain for this device is 220 @ 500mA 2V
a collector emitter saturation voltage of -135mV
the vce saturation(Max) is 170mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
NSS40200LT1G Applications
There are a lot of ON Semiconductor NSS40200LT1G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
