MPSW51G Overview

In this device, the DC current gain is 60 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -700mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Maximum collector currents can be below 1A volts.

MPSW51G Features

the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 50MHz

MPSW51G Applications

There are a lot of ON Semiconductor MPSW51G applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver