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KSD1621STF

KSD1621STF

KSD1621STF

ON Semiconductor

KSD1621STF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD1621STF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code compliant
Base Part Number KSD1621
Power - Max 500mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 75mA, 1.5A
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 150MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.495120 $8.49512
10 $8.014264 $80.14264
100 $7.560627 $756.0627
500 $7.132667 $3566.3335
1000 $6.728931 $6728.931
KSD1621STF Product Details

KSD1621STF Overview


This device has a DC current gain of 140 @ 100mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Device displays Collector Emitter Breakdown (25V maximal voltage).

KSD1621STF Features


the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 400mV @ 75mA, 1.5A

KSD1621STF Applications


There are a lot of ON Semiconductor KSD1621STF applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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