KSD1621STF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD1621STF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-243AA
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Reach Compliance Code
compliant
Base Part Number
KSD1621
Power - Max
500mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 75mA, 1.5A
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
2A
Frequency - Transition
150MHz
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$8.495120
$8.49512
10
$8.014264
$80.14264
100
$7.560627
$756.0627
500
$7.132667
$3566.3335
1000
$6.728931
$6728.931
KSD1621STF Product Details
KSD1621STF Overview
This device has a DC current gain of 140 @ 100mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Device displays Collector Emitter Breakdown (25V maximal voltage).
KSD1621STF Features
the DC current gain for this device is 140 @ 100mA 2V the vce saturation(Max) is 400mV @ 75mA, 1.5A
KSD1621STF Applications
There are a lot of ON Semiconductor KSD1621STF applications of single BJT transistors.